Widianto, Widianto and Syafaah, Lailis and nurhadi, nurhadi (2018) Effects of Process Variations in a HCMOS IC using a Monte Carlo SPICE Simulation. Jurnal Kinetik, 3 (1). ISSN 2503-2267
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Abstract
In this paper, the effects of process variations in a HCMOS (High-Speed Complementary Metal Oxide Semiconductor) IC (Integrated Circuit) are examined using a Monte Carlo SPICE (Simulation Program with Integrated Circuit Emphasis) simulation. The variations of the IC are L and VTO variations. An evaluation method is used to evaluate the effects of the variations by modeling it using a normal (Gaussian) distribution. The simulation results show that the IC may be detected as a defective IC caused by the variations based on large supply currents flow to it
Item Type: | Article |
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Keywords: | Process Variations High-Speed Complementary Metal Oxide SemiconductorIntegrated Circuit Monte Carlo Normal Distribution |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
Divisions: | Faculty of Engineering > Department of Electrical Engineering (20201) |
Depositing User: | evalina Risqi Evalina ST. |
Date Deposited: | 14 Mar 2024 04:11 |
Last Modified: | 14 Mar 2024 04:11 |
URI: | https://eprints.umm.ac.id/id/eprint/4733 |