Widianto, Widianto and Syafaah, Lailis and nurhadi, nurhadi (2017) IDDQ TESTING FOR DETECTING RESISTIVE OPEN DEFECTS IN HCMOS LOGIC ICS. In: Prosiding IDDQ Testing Resistive Detection Open Deffect HCMOS. Universitas Muhammadiyah Malang.
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Abstract
Resistive open defects may occur at an input gate in a HCMOS logic IC. The defects may be
caused by an opened metal line and may degrade performances of the IC. An IDDQ testing is proposed
to detect the defects. The testing is based on measuring a quiescent supply current IDDQ value which
flows to the IC. The defective IC is detected by flowing the larger IDDQ value compared to the defectfree IC. Feasibility of the testing is implemented in the IC designed by a SPICE library of NXP
semiconductor Co. Ltd and is examined using a SPICE simulation of LTSpiceIV. Simulation results show
that the resistive open defects may be detected by the IDDQ testing.
| Item Type: | Book Section / Proceedings |
|---|---|
| Keywords: | resistive open defects HCMOS IC IDDQ testing defective IC |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Engineering > Department of Electrical Engineering (20201) |
| Depositing User: | faruq Amrul Faruq |
| Date Deposited: | 06 Sep 2024 07:38 |
| Last Modified: | 06 Sep 2024 07:38 |
| URI: | https://eprints.umm.ac.id/id/eprint/10886 |
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