DESAIN GATE DRIVER UNTUK MOSFET PARALEL PADA TEGANGAN DAYA MENENGAH

The design of the parallel MOSFET gate driver is a system used to control MOSFETs in a power circuit. The main purpose of this design is to enhance the performance of parallel MOSFETs in power circuits that require high speed and efficiency. In this parallel MOSFET gate driver design, six MOSFETs are connected in parallel with a half-bridge configuration, and a PWM generator plays a crucial role in controlling the output power by modifying the pulse width that will be fed to the IR2104 IC as the MOSFET gate driver to control the on and off states during high and low conditions. By adding a totem pole amplifier, which can increase the switching speed of the MOSFET, power losses are reduced, and system efficiency is improved. Based on the test results of the parallel MOSFET gate driver circuit with and without the totem pole amplifier, the rise time of the MOSFET is 30 ns faster, and the delay rise time from PWM to output voltage (Vout) is 260 ns faster compared to the parallel MOSFET gate driver circuit without the totem pole amplifier. Additionally, the fall time is 190 ns faster, and the delay fall time from PWM to output voltage (Vout) is also faster compared to the parallel MOSFET gate driver circuit without the totem pole amplifier. Moreover, in the load test with a 60W, 14,6ohm power resistor, the output power resulted in 0.730W higher than the parallel MOSFET gate driver circuit without the totem pole amplifier